AMETIST team has studied the etching characteristics of lattice-matched GaInP/GaAs/GaInNAsSb heterostructures by aqueous solutions of iodic acid (HIO3) and hydrochloric acid (HCl), developing optimized etching conditions for mesa etching. The study is published in Solar Energy Materials and Solar Cells.
Optimized mesa etching developed for GaInP/GaAs/GaInNAsSb heterostructures
