Back reflector boosted 0.8 eV GaInNAsSb junction for multijunction solar cells

PhD candidate Riku Isoaho has recently published new results for 0.8 eV GaInNAsSb bottom junction that enables for the AMETIST TEAM to realize. For one sun illumination, the developed junction already rivals Ge bottom junctions that are used in commercial space photovoltaics.

The findings are reported in Solar Energy Materials and Solar Cells.